LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Faʻamatalaga
LPT-7 ua fuafuaina mo nonlinear opitika faʻataʻitaʻoga aʻoaʻoga i Kolisi ma iunivesite. E mafai ona fesoasoani i tamaiti aʻoga malamalama i le diode pamuina mautu-setete (DPSS) teori ma leisa taimi faʻaluaina tekonolosi. O se leisa malo-malo: YVO4 tioata pei maua mea, lea e aofia ai semiconductor leisa pamuina wavelength o 808 nm ma emission i 1.064 M. infrared malamalama e ala i le KTP tioata pei o leisa intracavity taimi faʻalua faaluaina lanu meamata tupulaga, e mafai ona matauina le tulaga ma le fuataga masani, o le alualu i luma faʻaluaina lelei, vaega vaega ma isi faʻavae faʻavae.
Faʻamatalaga
Leisa Semiconductor | |
CW Galuega Faatino Mana | M 500 mW |
Polarization | TE |
Totonu Wavelength | 808 ± 10 nm |
Faagaioiga vevela vevela | 10 ~ 40 ° C |
Taʻavale i le taimi nei | 0 ~ 500 mA |
Nd: YVO4 Crystal | |
Nd Doping Faʻasalaga | 0.1 ~ 3 atm% |
Tulaga | 3 × 3 × 1 mm |
Mafolafola | <λ / 10 @ 632.8 nm |
Ufiufi | AR @ 1064 nm, R <0,1%; 808 = ”" t = ""> 90% |
KTP Crystal | |
Transmissive Wavelength Range | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33= 36 i le afiafi / V |
Tulaga | 2 × 2 × 5 mm |
Faʻaulu faʻata | |
Lapoa | Φ 6 mm |
Le faʻasologa o le curvature | 50 mm |
Leisa e faʻatulagaina He-Ne | M 1 mW @ 632.8 nm |
IR Vaʻai Card | Spectral tali atu: 0.7 ~ 1.6 µm |
Matatioata Saogalēmū leisa | FA = 4+ mo 808 nm ma 1064 nm |
Meter Mana e ui mai | 2 μW ~ 200 mW, 6 fua |
LISI LISI
Leai. |
Faʻamatalaga |
Parameter |
Qty |
1 |
Rail Optical | ma faavae ma efuefu ufiufi, He-Ne leisa sapalai mana ua faapipiiina totonu faavae |
1 |
2 |
Umia leisa He-Ne | ma feaveaʻi |
1 |
3 |
Ogatasi Aperture | f1 mm mea uma feaveaʻi |
1 |
4 |
Faamama | f10 mm aperturewith feaveaʻi |
1 |
5 |
Faʻaulu faʻata | BK7, f6 mm R = 50 mm faʻatasi ai ma le 4-axis e mafai ona faʻatulagaina fauina ma feaveaʻi |
1 |
6 |
KTP Crystal | 2 × 2 × 5 mm faʻatasi ai ma le 2-au faʻataʻotoina umiaina ma feaveaʻi |
1 |
7 |
Nd: YVO4 Crystal | 3 × 3 × 1 mm faʻatasi ai ma le 2-au faʻataʻotoina umiaina ma feaveaʻi |
1 |
8 |
808nm LD (laser diode) | M 500 mWwith 4-axis fetuʻunaʻi umiaina ma feaveaʻi |
1 |
9 |
Detector Ulu Umia | ma feaveaʻi |
1 |
10 |
Pepa Vaʻaiga Infrared | 750 ~ 1600 nm |
1 |
11 |
Faagaau leisa He-Ne | 1.5mW@632.8 nm |
1 |
12 |
Meter Mana e ui mai | 2 μW~200 mW (6 laina) |
1 |
13 |
Detector Ulu | ma le ufiufi ma le pou |
1 |
14 |
LD Pule Nei | 0 ~ 500 mA |
1 |
15 |
Maea Mana |
3 |
|
16 |
Tusi Faatonuga | V1.0 |
1 |
Tusi lau feʻau ii ma lafo mai ia matou