LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Fa'amatalaga
Semiconductor Laser | |
CW Malosiaga o Galuega | ≤ 500 mW |
Polarization | TE |
Galulue Tutotonu | 808 ± 10 nm |
Fa'agaioiga Temperature Range | 10 ~ 40 °C |
Avetaavale i le taimi nei | 0 ~ 500 mA |
Nd: YVO4tioata | |
Nd Doping Concentration | 0.1 ~ 3 atm% |
Fua | 3×3×1 mm |
Mafolafola | <λ/10 @632.8 nm |
Ufiufi | AR@1064 nm, R<0.1%;808="" t="">90% |
KTP Crystal | |
Fa'asa'o le Galu umi | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33=36 pm/V |
Fua | 2×2×5 mm |
Fa'ata Fuafuaga | |
Diamita | Φ 6 mm |
Radius o Curvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
Pepa Va'ai IR | Va'aiga tali mata'utia: 0.7 ~ 1.6 µm |
Mata tioata Saogalemu Laser | OD= 4+ mo le 808 nm ma le 1064 nm |
Optical Power Meter | 2 μW ~ 200 mW, 6 fua |
LISI VAEGA
Leai. | Fa'amatalaga | Parameter | Qty |
1 | Fa'ailoga Fa'atonu | fa'atasi ai ma le fa'avae ma le pefu e ufiufi, o lo'o fa'apipi'iina le sapalai eletise leisa He-Ne i totonu o le fa'avae | 1 |
2 | He-Ne Laser Holder | ma ave taavale | 1 |
3 | Fa'asagaga Ava | f1 mm pu ma ave | 1 |
4 | Filifili | f10 mm avanoa fa'atasi ai ma le va'a | 1 |
5 | Fa'ata Fuafuaga | BK7, f6 mm R = 50 mm faatasi ai ma le 4-axis e mafai ona fa'apipi'iina ma fa'apipi'i | 1 |
6 | KTP Crystal | 2 × 2 × 5 mm faatasi ai ma le 2-axis e mafai ona faʻapipiʻi faʻamau ma ave | 1 |
7 | Nd:YVO4 tioata | 3 × 3 × 1 mm faatasi ai ma le 2-axis e mafai ona faʻapipiʻi faʻamau ma ave | 1 |
8 | 808nm LD (diode laser) | ≤ 500 mWwith 4-axis adjustable holder and carrier | 1 |
9 | Usu Ulu Su'esu'e | ma ave taavale | 1 |
10 | Pepa Va'ai Infrared | 750 ~ 1600 nm | 1 |
11 | He-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
12 | Optical Power Meter | 2μW~200 mW (6 vaega) | 1 |
13 | Ulu su'esu'e | ma le ufiufi ma le pou | 1 |
14 | LD Pule i le taimi nei | 0 ~ 500 mA | 1 |
15 | Uaea Malosi | 3 | |
16 | Tusi Taiala | V1.0 | 1 |
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