LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Fa'amatalaga
| Semiconductor Laser | |
| CW Malosiaga o Galuega | ≤ 500 mW |
| Polarization | TE |
| Galulue Tutotonu | 808 ± 10 nm |
| Fa'agaioiga Temperature Range | 10 ~ 40 °C |
| Avetaavale i le taimi nei | 0 ~ 500 mA |
| Nd: YVO4tioata | |
| Nd Doping Concentration | 0.1 ~ 3 atm% |
| Fua | 3×3×1 mm |
| Mafolafola | <λ/10 @632.8 nm |
| Ufiufi | AR@1064 nm, R<0.1%; 808="" t="">90% |
| KTP Crystal | |
| Tu'u o le Uumi Galu | 0.35 ~ 4.5 µm |
| Electro-Optic Coefficient | r33=36 pm/V |
| Fua | 2×2×5 mm |
| Fa'ata Fuafuaga | |
| Diamita | Φ 6 mm |
| Radius o Curvature | 50 mm |
| He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
| Pepa Va'ai IR | Va'aiga tali mata'utia: 0.7 ~ 1.6 µm |
| Mata tioata Saogalemu Laser | OD= 4+ mo le 808 nm ma le 1064 nm |
| Optical Power Meter | 2 μW ~ 200 mW, 6 fua |
LISI VAEGA
| Leai. | Fa'amatalaga | Parameter | Qty |
| 1 | Fa'ailoga Mata'utia | fa'atasi ai ma le fa'avae ma le pefu e ufiufi, o lo'o fa'apipi'iina le sapalai eletise leisa He-Ne i totonu o le fa'avae | 1 |
| 2 | He-Ne Laser Holder | ma ave taavale | 1 |
| 3 | Fa'asagaga Ava | f1 mm pu ma ave | 1 |
| 4 | Filifili | f10 mm avanoa fa'atasi ai ma le va'a | 1 |
| 5 | Fa'ata Fuafuaga | BK7, f6 mm R = 50 mm faatasi ai ma le 4-axis e mafai ona fa'apipi'iina ma fa'apipi'i | 1 |
| 6 | KTP Crystal | 2 × 2 × 5 mm faatasi ai ma le 2-axis e mafai ona faʻapipiʻi faʻamau ma ave | 1 |
| 7 | Nd:YVO4 tioata | 3 × 3 × 1 mm faatasi ai ma le 2-axis e mafai ona faʻapipiʻi faʻamau ma ave | 1 |
| 8 | 808nm LD (diode laser) | ≤ 500 mWwith 4-axis adjustable holder and carrier | 1 |
| 9 | Usu Ulu Su'esu'e | ma ave taavale | 1 |
| 10 | Pepa Va'ai Infrared | 750 ~ 1600 nm | 1 |
| 11 | He-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
| 12 | Optical Power Meter | 2μW~200 mW (6 vaega) | 1 |
| 13 | Ulu su'esu'e | ma le ufiufi ma le pou | 1 |
| 14 | LD Pule i le taimi nei | 0 ~ 500 mA | 1 |
| 15 | Uaea Malosi | 3 | |
| 16 | Tusi Taiala | V1.0 | 1 |
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